Home
»
»
InAs (100), P Type, Zn doped 2" dia x 0.5 mm, one side polished - IAZna50D05C1US5 Battery Cell Tester Specifications: TYPE: NH20-250*185-36
InAs (100), P Type, Zn doped 2" dia x 0.5 mm, one side polished - IAZna50D05C1US5 Battery Cell Tester Specifications: TYPE: NH20-250*185-36
$399.62
Description
Specifications: TYPE: NH20-250*185-36
instead of loading sample directly inside the tube
Please click the picture above to see details of system setup
Size: 10x10x0
InAs (100), P Type, Zn doped 2" dia x 0.5 mm, one side polished - IAZna50D05C1US5 Battery Cell Tester Specifications: TYPE: NH20-250*185-362" InAs wafer (P type) 2" InAs wafer P Type, Zn doped Size: 2" dia x0. 5 mm + 20 microns Orientation: <100> + 0. 50 Polishing: one side polishd Packing: in 1000 class clean room with wafer container Properties Growth method LEC Orientation (100) + 0. 5 o Orientation Flat <110> < 110> Doping Zn doped Conductivity type P type Carrier Concentration (3 7)E18 cm3 Mobility 100 500 cm2 V. S EPD <10000 cm 2
Shipping Notes
- Free Standard Shipping on $100+ Orders to the USA.
- Except Preorder products are shipped in 48 hours.
- Delivery to the USA:
- Standard Shipping : 3-10 business days
- If time is of the essence, please consider selecting expedited delivery for faster service.
, P Type, Zn doped 2){kind=link}