VGF-GaAs (100) orientation, Zn-doped 10x10x0.625 mm, 1sp YSZ (Yittrium stabilized ZrO2)

VGF-GaAs (100) orientation, Zn-doped 10x10x0.625 mm, 1sp YSZ (Yittrium stabilized ZrO2)GaAs single crystal wafer Growing Method: VGF Orientation: (100) Size: 10x10x0. 625mm Polishing: one side polished Doping: Zn doped Conductor type: P type Carrier Concentration: (1. 3 2. 2) x 10^19 cm^3 Mobility: 64 75 cm^2 V. S EPD: <5000 cm^2 resistivity: (4. 5 6. 7)x10^ 3 ohm. cm Ra(Average Roughness) : < 0. 4 nm Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces

Surface Finish:Front side: Epi- polished Ra=0

Tips: You may use blank flange to make DIY (feedthrough) ports

MTI does not manufacture this product

Parts should not be placed directly onto the inside surface of a hot furnace tube increase of thermal shock

This is a replacement kit set for MTI's Slot Die Head

Phenolic black caps included

you must sharpen diamond blade frequently

Part Number EQ-SC0604 Arbor Dia 0

the bottom cylinder (piston) in the cross-section illustration in the dimension section below Operation Temperature 10 - 40°C Dimensions

4cm Net Weight 2

Steps to make sample pellet Mixing and grinding chemical powder by agate mortar or Ball Mill

Removal Strength from Tab