Ge single crystal substrate (100)N-type ,undoped ,10x10x0.5mm,2sp, R>40 ohm.cm CsI(Tl) Vacuum Drying

Vacuum Drying

-Size: (LxWxT) 100 mm x 100 mm x 1

2mm tab (10 pcs 0

Please consider to have Seals metal threads to prevents leakage for MTI Flange (MTI-SEAL-MT)

Ge single crystal substrate (100)N-type ,undoped ,10x10x0.5mm,2sp, R>40 ohm.cm CsI(Tl) Vacuum DryingSpecifications Growing Method: CZ Wafer Size: 10x10x0. 5 mm Surface Polishing: two sides epi polished Orientation: (100) Surface roughness: RMS or Ra:~ 10 A(By AFM) Doping: Undoped Conductor type: N type Resistivity: > 40 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room in wafer container Related Product Other Crystal wafer A Z