InSb (100) 10x10x 0.45 mm, N type, Te doped, 1 side polished Pyrolytic Graphite Substrate & Foam Resistivity: 0

Resistivity:                     0

20 mm (for the separator to fully separate the electrodes in both negative and positive cases)

65  micro-ohm-cm

Click here to learn the installation of a gas regulator

InSb (100) 10x10x 0.45 mm, N type, Te doped, 1 side polished Pyrolytic Graphite Substrate & Foam Resistivity: 010x10x0. 45 mm InSb wafer (N type, Te doped) Size: 10x10x0. 45 mm Orientation <100> + 0. 5o with two reference flats Polishing: one side side polishd ( back side etched ) Packing: Sealed under nitrogen with single wafer comtainer in 1000 class clean room Properties Growth method LEC Orientation (100) + 0. 5o Doping Te doped Conductivity type N type Carrier Concentration (0. 19 0. 5)E18 @77K Mobility >(3. 58 5. 6)E4 cm2 Vs EPD <1200 1500 cm 2