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High Purity Silicon Carbide (SiC) Tube: 50 OD x 38 ID x 1000 L (mm) - TSC50D1000L CsI(Tl) Crystal growth method
High Purity Silicon Carbide (SiC) Tube: 50 OD x 38 ID x 1000 L (mm) - TSC50D1000L CsI(Tl) Crystal growth method
$160885.00
Description
Crystal growth method
The sturdy table measures 6" x 10"
You may use lab press and dry pressing die below to prepare an electrode pellet instead of using electrode coated Al or Cu foil
Configuration of Right Flange:
High Purity Silicon Carbide (SiC) Tube: 50 OD x 38 ID x 1000 L (mm) - TSC50D1000L CsI(Tl) Crystal growth methodSpecifications: Purity: > 98. 5% Temperature (Air): 1700C Max. Density: ? 3. 14kg m3 Thermal Conductivity: 160W (m*K) Thermal Expansion Coefficient: 4. 3K 1 x 10 6 Dimension: 50 OD x 38 ID x 1000 L (mm) To get a longer tube service life, please use quartz or alumina crucibles to carry the sample, instead of loading the sample directly inside the tube. Please click the picture below to choose one crucible boat: Inspect your delivery: Please check the
Shipping Notes
- Free Standard Shipping on $100+ Orders to the USA.
- Except Preorder products are shipped in 48 hours.
- Delivery to the USA:
- Standard Shipping : 3-10 business days
- If time is of the essence, please consider selecting expedited delivery for faster service.
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