SiC - 4H (0001), 5x5x0.3 mm , one side polished BaF2 KF40 feedthrough is included for

KF40 feedthrough is included for Ar gas glovebox since Jan

Interior Material: Stainless Steel and Fibrous Refractory Shell

Rolling pressing is necessary to ensure good density and adhesion of electrode materials to the current collector substrate after coating

Cutting Blade Come with 5 pcs of the impregnated diamond blade of 4" Dia × 0

SiC - 4H (0001), 5x5x0.3 mm , one side polished BaF2 KF40 feedthrough is included forSpecifications of Substrate Orientation: <0001> + 0. 5 Dimension: 5x5 x 0. 3 + 0. 03 mm Polished: One sides epi polished on Si face Surface Roughness: < 10 A by AFM Typical Properties of Single Crystal SiC Formula weight: 40. 10 Unit Cell: Hexagonal Lattice constant: a =3. 07 A c = 10. 05 A Stacking sequence: ABCB (4H) Growth Technique: MOCVD Polishing : Silicon face polished Band Gap: 3. 26 eV ( Indirect) Conductivity type: N TTV Bow Warp: <=35um