1000 ohm-cm - SiUa101D05C2R1000 Hydrothermal Reactors Melting point: 1339 degree CSingle crystal Si, Conductivity: Undoped Type: N Resistivity: > 1000 ohm CM Size: 4" diameter x 0. 5 mm Orientation: (100) Polish: two sides polished Surface roughness: < 5A Optional: you may need tool below to handle the wafer ( click picture to order ) Other Crystal wafer A Z Plasma Cleaner Wafer Containers Dicing saw Film Coater"> 1000 ohm-cm - SiUa101D05C2R1000 Hydrothermal Reactors Melting point: 1339 degree C"> 1000 ohm-cm - SiUa101D05C2R1000 Hydrothermal Reactors Melting point: 1339 degree CSingle crystal Si, Conductivity: Undoped Type: N Resistivity: > 1000 ohm CM Size: 4" diameter x 0. 5 mm Orientation: (100) Polish: two sides polished Surface roughness: < 5A Optional: you may need tool below to handle the wafer ( click picture to order ) Other Crystal wafer A Z Plasma Cleaner Wafer Containers Dicing saw Film Coater"> 1000 ohm-cm - SiUa101D05C2R1000 Hydrothermal Reactors Melting point: 1339 degree C"> 1000 ohm-cm - SiUa101D05C2R1000 Hydrothermal Reactors Melting point: 1339 degree CSingle crystal Si, Conductivity: Undoped Type: N Resistivity: > 1000 ohm CM Size: 4" diameter x 0. 5 mm Orientation: (100) Polish: two sides polished Surface roughness: < 5A Optional: you may need tool below to handle the wafer ( click picture to order ) Other Crystal wafer A Z Plasma Cleaner Wafer Containers Dicing saw Film Coater"> Si Wafer (100), 4" dia x 0.5 mm, 2SP, N-type, Undoped, resistivities: > 1000 ohm-cm - SiUa101D05C2R1000 Hydrothermal Reactors Melting point: 1339 degree C – ingstefanobasso.it

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Si Wafer (100), 4" dia x 0.5 mm, 2SP, N-type, Undoped, resistivities: > 1000 ohm-cm - SiUa101D05C2R1000 Hydrothermal Reactors Melting point: 1339 degree C

$162.28

Quantity
1000 ohm-cm - SiUa101D05C2R1000 Hydrothermal Reactors Melting point: 1339 degree C">
Description

Melting point: 1339 degree C

Carbon Content:

3 Installation Disk 1 pc 4 Alligator Clips for connecting a battery 8 pc

Surface roughness:             < 8 A

Si Wafer (100), 4" dia x 0.5 mm, 2SP, N-type, Undoped, resistivities: > 1000 ohm-cm - SiUa101D05C2R1000 Hydrothermal Reactors Melting point: 1339 degree CSingle crystal Si, Conductivity: Undoped Type: N Resistivity: > 1000 ohm CM Size: 4" diameter x 0. 5 mm Orientation: (100) Polish: two sides polished Surface roughness: < 5A Optional: you may need tool below to handle the wafer ( click picture to order ) Other Crystal wafer A Z Plasma Cleaner Wafer Containers Dicing saw Film Coater

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