Al2O3 - Sapphire Wafer, C-plane (0001), 2"dia x 0.5mm 2SP - ALC50D05C2 Tube Furnaces

Al2O3 - Sapphire Wafer, C-plane (0001), 2"dia x 0.5mm 2SP - ALC50D05C2 Tube FurnacesFeatures: Sapphire (single crystal of Al2O3 ) is being used extensively as a substrate for III V nitrides and for many other epitaxial films Orientation: C axis[0001]( + 0. 3 Deg) with Standard Flat Diameter: 2" + 0. 3mm Thickness: 500um + 25 um Major Flat: A axis[11 20]+ 0. 2o Surface Finish: Front sides: Epi polished Ra<0. 5nm (by AFM) Back side: Epi polished , <0. 5nm(by AFM) TTV: < 10um Polished surface: Two side epi polished by special CMP

1220°C ~ 1500°C (in H2)

18650 case's grooving  and sealing machine is available upon request

CE Certified

combination of grinding jar and milling ball

FeCrAl Resistance wire:           Max

One end is 1/8 BSPP male fitting

Off axis: miscut  8

Two stainless steel bases for the top and bottom

Volume: 250 ml

Installation When installing a heating element into furnaces

Constant Current & Voltage Charging

Power upper limit